Title :
«Visual» design of 2–18 GHz MMIC low noise amplifier
Author :
Dobush, I.M. ; Samuilov, A.A. ; Kalentyev, A.A. ; Goryainov, A.E. ; Babak, L.I.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron. (TUSUR), Tomsk, Russia
Abstract :
The "visual" design of 2-18 GHz MMIC low noise amplifier (LNA) based on 0.15 μm GaAs pHEMT technology is presented. The use of software tools for the "visual" design of microwave amplifiers has allowed simplifying and accelerating the design procedure.
Keywords :
III-V semiconductors; MMIC amplifiers; UHF amplifiers; gallium arsenide; high electron mobility transistors; low noise amplifiers; wide band gap semiconductors; GaAs; LNA; MMIC low noise amplifier; design procedure; frequency 2 GHz to 18 GHz; microwave amplifier; pHEMT technology; size 0.15 mum; software tools; visual design; Gallium arsenide; MMICs; Microwave amplifiers; Microwave transistors; PHEMTs; Visualization;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
