DocumentCode
2034323
Title
«Visual» design of 2–18 GHz MMIC low noise amplifier
Author
Dobush, I.M. ; Samuilov, A.A. ; Kalentyev, A.A. ; Goryainov, A.E. ; Babak, L.I.
Author_Institution
Tomsk State Univ. of Control Syst. & Radioelectron. (TUSUR), Tomsk, Russia
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
151
Lastpage
152
Abstract
The "visual" design of 2-18 GHz MMIC low noise amplifier (LNA) based on 0.15 μm GaAs pHEMT technology is presented. The use of software tools for the "visual" design of microwave amplifiers has allowed simplifying and accelerating the design procedure.
Keywords
III-V semiconductors; MMIC amplifiers; UHF amplifiers; gallium arsenide; high electron mobility transistors; low noise amplifiers; wide band gap semiconductors; GaAs; LNA; MMIC low noise amplifier; design procedure; frequency 2 GHz to 18 GHz; microwave amplifier; pHEMT technology; size 0.15 mum; software tools; visual design; Gallium arsenide; MMICs; Microwave amplifiers; Microwave transistors; PHEMTs; Visualization;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6652765
Link To Document