Title :
Mechanical characterization of wafer level bump-less Cu-Cu bonding
Author :
Peng, Li-Yi ; Zhang, Leiqi ; Li, H.Y. ; Lo, G.Q. ; Tan, C.S.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
In this paper, the mechanical properties of wafer-level high density Cu-Cu bonding are analyzed. The fabrication flow is optimized based on surface cleanliness, wafer uniformity, W2W alignment accuracy and oxide recess for successful bonding. Post- bonding characterizations include shear test and failure analysis to identify the mechanical strength and failure mechanisms. It is found that failures at Cu-Cu bonding interface are largely attributed to wafer non-uniformity.
Keywords :
bonding processes; failure analysis; mechanical strength; surface cleaning; wafer level packaging; W2W alignment accuracy; fabrication flow; failure analysis; failure mechanisms; mechanical characterization; mechanical strength; shear test; surface cleanliness; wafer level bump-less Cu-Cu bonding; wafer uniformity; Bonding; Mechanical factors; Passivation; Semiconductor device reliability; Substrates;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4553-8
Electronic_ISBN :
978-1-4673-4551-4
DOI :
10.1109/EPTC.2012.6507123
