DocumentCode
20345
Title
A Novel Solar Simulator Based on a Supercontinuum Laser for Solar Cell Device and Materials Characterization
Author
Dennis, Tasshi ; Schlager, J.B. ; Bertness, K.A.
Author_Institution
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Volume
4
Issue
4
fYear
2014
fDate
Jul-14
Firstpage
1119
Lastpage
1127
Abstract
The design, operation, and application of a novel solar simulator based on a high-power supercontinuum fiber laser are described. The simulator features a multisun irradiance with continuous spectral coverage from the visible to the infrared. By use of a prism-based spectral shaper, the simulator can be matched to any desired spectral profile, including the ASTM G-173-03 air-mass 1.5 reference spectrum. The simulator was used to measure the efficiency of gallium arsenide (GaAs), crystalline silicon (Si), amorphous Si, and copper-indium-gallium-selenide (CIGS) thin-film solar cells, showing agreement with independent measurements. The pulsed temporal characteristic of the simulator was studied and would appear to have a negligible influence on measured cell efficiency. The simulator light was focused to a spot of approximately 8 μm in diameter and used to create micrometer-scale spatial maps of full spectrum optical-beam-induced current. Microscopic details such as grid lines, damage spots, and material variations were selectively excited and resolved on GaAs and CIGS cells. The spectral shaping capabilities were used to create output spectra appropriate for selectively light-biasing multijunction cell layers. The simulator was used to create variable blue-rich and red-rich spectra that were applied to a GaInP/GaAs tandem solar cell to illustrate the current-limiting behavior.
Keywords
III-V semiconductors; amorphous semiconductors; copper compounds; elemental semiconductors; fibre lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junctions; semiconductor thin films; silicon; solar cells; ternary semiconductors; CuInGaSe2; GaAs; GaInP-GaAs; GaInP-GaAs tandem solar cell; Si; amorphous Si thin-film solar cell efficiency; blue-rich spectra; continuous spectral coverage; copper-indium-gallium-selenide thin-film solar cell efficiency; crystalline silicon thin-film solar cell efficiency; current-limiting behavior; damage spots; full spectrum optical-beam-induced current; gallium arsenide thin-film solar cell efficiency; grid lines; high-power supercontinuum fiber laser; material characterization; material variations; micrometer-scale spatial maps; multisun irradiance; output spectra; prism-based spectral shaper; pulsed temporal characteristic; red-rich spectra; selectively light-biasing multijunction cell layers; simulator light; solar cell device; solar simulator; spectral profile; spectral shaping capabilities; Current measurement; Gallium arsenide; Laser beams; Measurement by laser beam; NIST; Photovoltaic cells; External quantum efficiency (EQE); metrology; microscopy; multijunction; optical-beam-induced current; photovoltaic; responsivity; solar cell; solar simulator; spectral mismatch; supercontinuum laser;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2014.2321659
Filename
6821268
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