• DocumentCode
    20345
  • Title

    A Novel Solar Simulator Based on a Supercontinuum Laser for Solar Cell Device and Materials Characterization

  • Author

    Dennis, Tasshi ; Schlager, J.B. ; Bertness, K.A.

  • Author_Institution
    Nat. Inst. of Stand. & Technol., Boulder, CO, USA
  • Volume
    4
  • Issue
    4
  • fYear
    2014
  • fDate
    Jul-14
  • Firstpage
    1119
  • Lastpage
    1127
  • Abstract
    The design, operation, and application of a novel solar simulator based on a high-power supercontinuum fiber laser are described. The simulator features a multisun irradiance with continuous spectral coverage from the visible to the infrared. By use of a prism-based spectral shaper, the simulator can be matched to any desired spectral profile, including the ASTM G-173-03 air-mass 1.5 reference spectrum. The simulator was used to measure the efficiency of gallium arsenide (GaAs), crystalline silicon (Si), amorphous Si, and copper-indium-gallium-selenide (CIGS) thin-film solar cells, showing agreement with independent measurements. The pulsed temporal characteristic of the simulator was studied and would appear to have a negligible influence on measured cell efficiency. The simulator light was focused to a spot of approximately 8 μm in diameter and used to create micrometer-scale spatial maps of full spectrum optical-beam-induced current. Microscopic details such as grid lines, damage spots, and material variations were selectively excited and resolved on GaAs and CIGS cells. The spectral shaping capabilities were used to create output spectra appropriate for selectively light-biasing multijunction cell layers. The simulator was used to create variable blue-rich and red-rich spectra that were applied to a GaInP/GaAs tandem solar cell to illustrate the current-limiting behavior.
  • Keywords
    III-V semiconductors; amorphous semiconductors; copper compounds; elemental semiconductors; fibre lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junctions; semiconductor thin films; silicon; solar cells; ternary semiconductors; CuInGaSe2; GaAs; GaInP-GaAs; GaInP-GaAs tandem solar cell; Si; amorphous Si thin-film solar cell efficiency; blue-rich spectra; continuous spectral coverage; copper-indium-gallium-selenide thin-film solar cell efficiency; crystalline silicon thin-film solar cell efficiency; current-limiting behavior; damage spots; full spectrum optical-beam-induced current; gallium arsenide thin-film solar cell efficiency; grid lines; high-power supercontinuum fiber laser; material characterization; material variations; micrometer-scale spatial maps; multisun irradiance; output spectra; prism-based spectral shaper; pulsed temporal characteristic; red-rich spectra; selectively light-biasing multijunction cell layers; simulator light; solar cell device; solar simulator; spectral profile; spectral shaping capabilities; Current measurement; Gallium arsenide; Laser beams; Measurement by laser beam; NIST; Photovoltaic cells; External quantum efficiency (EQE); metrology; microscopy; multijunction; optical-beam-induced current; photovoltaic; responsivity; solar cell; solar simulator; spectral mismatch; supercontinuum laser;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2014.2321659
  • Filename
    6821268