Title :
A new current sensor based on MagFET highly immune to EMI
Author :
Aiello, O. ; Fiori, F.
Author_Institution :
EMC Competence Center, Ist. Superiore Mario Boella, Turin, Italy
Abstract :
This paper deals with the susceptibility to electromagnetic interference of CMOS integrated current sensors for power transistor current monitoring. Conventional integrated solution are first considered, hence a new integrated current sensor based on the Hall effect in MOS transistors (MagFET) is proposed. The susceptibility to radio frequency interference of a conventional (wired) current sensor and that of the MagFET-based solution is discussed.
Keywords :
CMOS integrated circuits; Hall effect devices; electric current measurement; electric sensing devices; power MOSFET; radiofrequency interference; CMOS integrated current sensors; EMI; Hall effect; MOS transistors; MagFET-highly immune sensor; conventional-wired current sensor; electromagnetic interference susceptibility; integrated solution; power transistor current monitoring; radio frequency interference susceptibility; Cables; Electromagnetic interference; Hall effect; MOSFETs; Magnetic sensors; Monitoring; Power transistors; Printed circuits; Radiofrequency interference; Voltage;
Conference_Titel :
Electromagnetics in Advanced Applications, 2009. ICEAA '09. International Conference on
Conference_Location :
Torino
Print_ISBN :
978-1-4244-3385-8
Electronic_ISBN :
978-1-4244-3386-5
DOI :
10.1109/ICEAA.2009.5297310
