DocumentCode :
2035202
Title :
A three-dimensional binocular range sensor LSI with a 106 dB wide dynamic range pixel
Author :
Kawano, Masatomo ; Hirata, Yukari ; Arima, Yutaka
Author_Institution :
Fukuoka Industy, Sci. & Technol. Found., Fukuoka, Japan
fYear :
2010
fDate :
21-24 Nov. 2010
Firstpage :
2469
Lastpage :
2473
Abstract :
We developed a 106 dB wide dynamic range binocular three-dimensional (3D) range sensor LSI. The developed LSI chip was produced using a process of 0.35 μm Complementary Metal Oxide Semiconductor (CMOS) 1-poly 3-metal and has a die size of 4.20 × 3.57 mm2. The chip uses a 3.0 V supply voltage and has a power consumption of 375 mW at a clock frequency of 10 MHz. The sensor has two image sensors and all the correlation circuits integrated on a single chip and its operation is based on stereo vision. We have previously developed a 3D range sensor LSI. However, this sensor uses a typical CMOS image sensor and was unable to simultaneously detect objects with an extreme brightness difference. Thus, the use of such sensors in an outdoor environment is difficult. The newly developed 3D range sensor LSI uses a pixel circuit with an expandable dynamic range. As a result, it became possible to simultaneously detect the 3D position of objects outdoors with different light conditions.
Keywords :
CMOS image sensors; large scale integration; 1-poly 3-metal; CMOS; LSI chip; clock frequency; complementary metal oxide semiconductor; correlation circuits; die size; dynamic range pixel; frequency 10 MHz; image sensors; size 0.35 mum; three-dimensional binocular range sensor LSI; voltage 3.0 V; CMOS; Range Sensor LSI; Wide Dyanamic Range Pixel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
ISSN :
pending
Print_ISBN :
978-1-4244-6889-8
Type :
conf
DOI :
10.1109/TENCON.2010.5685919
Filename :
5685919
Link To Document :
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