DocumentCode
2035202
Title
A three-dimensional binocular range sensor LSI with a 106 dB wide dynamic range pixel
Author
Kawano, Masatomo ; Hirata, Yukari ; Arima, Yutaka
Author_Institution
Fukuoka Industy, Sci. & Technol. Found., Fukuoka, Japan
fYear
2010
fDate
21-24 Nov. 2010
Firstpage
2469
Lastpage
2473
Abstract
We developed a 106 dB wide dynamic range binocular three-dimensional (3D) range sensor LSI. The developed LSI chip was produced using a process of 0.35 μm Complementary Metal Oxide Semiconductor (CMOS) 1-poly 3-metal and has a die size of 4.20 × 3.57 mm2. The chip uses a 3.0 V supply voltage and has a power consumption of 375 mW at a clock frequency of 10 MHz. The sensor has two image sensors and all the correlation circuits integrated on a single chip and its operation is based on stereo vision. We have previously developed a 3D range sensor LSI. However, this sensor uses a typical CMOS image sensor and was unable to simultaneously detect objects with an extreme brightness difference. Thus, the use of such sensors in an outdoor environment is difficult. The newly developed 3D range sensor LSI uses a pixel circuit with an expandable dynamic range. As a result, it became possible to simultaneously detect the 3D position of objects outdoors with different light conditions.
Keywords
CMOS image sensors; large scale integration; 1-poly 3-metal; CMOS; LSI chip; clock frequency; complementary metal oxide semiconductor; correlation circuits; die size; dynamic range pixel; frequency 10 MHz; image sensors; size 0.35 mum; three-dimensional binocular range sensor LSI; voltage 3.0 V; CMOS; Range Sensor LSI; Wide Dyanamic Range Pixel;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location
Fukuoka
ISSN
pending
Print_ISBN
978-1-4244-6889-8
Type
conf
DOI
10.1109/TENCON.2010.5685919
Filename
5685919
Link To Document