Title :
Effects of elevated junction temperature on the RF-properties of optimised IMPATTs: Estimation of frequency chirp-bandwidth during pulsed-operation
Author :
Chakraborty, Diptadip ; Mukherjee, Moumita
Author_Institution :
Centre of Millimeter-wave Semicond. Devices & Syst., Univ. of Calcutta, Kolkata, India
Abstract :
Elevated junction temperature effects on W-band double-drift (p+ p n n+) Si IMPATT diode for high-power pulsed-mode operation is investigated through a modified simulation technique. It is observed that the diodes have a specific optimum temperature range of operation, to achieve a stable and high RF-power operation. The authors have made a detailed analysis of temperature dependence of RF characteristics of Si IMPATT diode operating under pulsed mode. The diode has been optimized for an optimum punch-through factor. For the first time the authors have calculated the admittance temperature coefficients of non punch-through diode operating in pulsed mode. The study reveals that the optimized diode is capable of delivering a pulsed power of ~25-35 W with an efficiency of -10%. The present study reveals that the frequency chirp-bandwidth for the device is around 1 GHz for the W-band operation.
Keywords :
IMPATT diodes; UHF diodes; elemental semiconductors; frequency estimation; silicon; RF-property; Si; W-band double-drift IMPATT diode; efficiency 10 percent; elevated junction temperature; frequency 1 GHz; frequency chirp-bandwidth estimation; modified simulation technique; power 25 W to 35 W; pulsed-operation; punch-through diode; Electric fields; Junctions; Radio frequency; Resistance; Semiconductor diodes; Silicon; Temperature; Chirp-bandwidth; Double Drift device; Si IMPATT; W-band window frequency; high-power operation; temperature coefficient of admittance;
Conference_Titel :
Electronics Computer Technology (ICECT), 2011 3rd International Conference on
Conference_Location :
Kanyakumari
Print_ISBN :
978-1-4244-8678-6
Electronic_ISBN :
978-1-4244-8679-3
DOI :
10.1109/ICECTECH.2011.5941674
