• DocumentCode
    2035944
  • Title

    Compressing deformation investigation of single-walled carbon nanotube coated with Ni

  • Author

    Youkai Chen ; Fulong Zhu ; Hengyou Liao ; Wei Zhang ; Sheng Liu

  • Author_Institution
    State Key Lab. for Digital Manuf. Equip. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China
  • fYear
    2012
  • fDate
    5-7 Dec. 2012
  • Firstpage
    728
  • Lastpage
    731
  • Abstract
    Mechanical behaviors of single-walled carbon nanotube (SWCNT) and Ni-coated single-walled carbon nanotube (SWCNT-Ni) were investigated by using molecular dynamics (MD) simulation method. From these results of molecular dynamics simulation for two models of SWCNT and SWCNT-Ni, it was found that the Young´s Modulus of SWCNT was higher than that of SWCNT-Ni, and failure stress and failure strain of SWCNT were also lower than that of SWCNT-Ni at same temperature point of 300K, 500K, and 700K. In order to understand compressing behaviors of different temperature, two different molecular models of SWCNT and SWCNT-Ni were analyzed at 300K, 500K and 700K respectively, and it was revealed that temperature fluctuation could also change the Young´s Modulus, critical stress, and critical strain. In this work, it was very clear that nickel atoms on surface of SWCNT-Ni could retard local buckling at the processing of compressing. Coating nickel atoms on surface of SWCNT could improve some mechanical properties of SWCNT.
  • Keywords
    Young´s modulus; carbon nanotubes; deformation; molecular dynamics method; nickel; protective coatings; C; Ni-C; Ni-coated single-walled carbon nanotube; SWCNT-Ni; Young´s modulus; buckling; critical strain; critical stress; deformation; failure strain; failure stress; mechanical properties; molecular dynamics simulation; temperature 300 K; temperature 500 K; temperature 700 K; temperature fluctuation; Carbon nanotubes; Fluctuations; Nickel; Strain; Stress; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4673-4553-8
  • Electronic_ISBN
    978-1-4673-4551-4
  • Type

    conf

  • DOI
    10.1109/EPTC.2012.6507178
  • Filename
    6507178