Title :
Plasma etching process of AIN/Mo and Moly for CMOS compatible MEMS devices
Author :
Wei Deng ; de xian, J.S.B.W.T.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
This work reports the methodology of aluminum nitride (AIN/Mo) and Molybdenum (Mo) etching specifically m microelectromechamcal systems (MEMS) fabrication. AIN/Mo etching is investigated in electron cyclotron resonance (ECR) reactive ion etching. It is found that the amsotropy of wet etching of AIN/Mo is notably affected by the crystal orientation (002) of the material. AIN/Mo etching is a critical step in AIN/Mo platform and essential to applications such as radio frequency (RF) MEMS and mertial MEMS.
Keywords :
CMOS integrated circuits; aluminium compounds; microfabrication; micromechanical devices; molybdenum; sputter etching; AlN-Mo; CMOS compatible MEMS devices; ECR reactive ion etching; MEMS fabrication; aluminum nitride methodology; electron cyclotron resonance reactive ion etching; material crystal orientation; microelectromechanical system fabrication; molybdenum etching methodology; plasma etching process; wet etching anisotropy; Conferences; Decision support systems; Electronics packaging;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4553-8
Electronic_ISBN :
978-1-4673-4551-4
DOI :
10.1109/EPTC.2012.6507182
