A 65nm CMOS 60 GHz class F-E power amplifier for WPAN applications

Author

Dréan, S. ; Deltimple, N. ; Kerhervé, E. ; Martineau, B. ; Belot, D.

Author_Institution

IMS Lab., Univ. of Bordeaux, Bordeaux, France

fYear

2012

fDate

Aug. 30 2012-Sept. 2 2012

Firstpage

1

Lastpage

4

Abstract

This work presents a two-stage 65nm CMOS 60 GHz power amplifier composed by a Class E power stage and a Class F driver stage, dedicated to low cost Wireless Personal Area Network (WPAN) applications. To provide a switching operation at 60 GHz, an output network with distributed elements is used instead of lumped elements. The simulation results show a saturated output power of 15 dBm with a peak PAE of 26% at 60 GHz. It achieves a gain of 15dB at 60 GHz.

Keywords

CMOS analogue integrated circuits; millimetre wave integrated circuits; millimetre wave power amplifiers; personal area networks; PAE; WPAN application; class E power stage; class F driver stage; distributed element; efficiency 26 percent; frequency 60 GHz; gain 15 dB; lumped element; size 65 nm; two-stage CMOS class F-E power amplifier; wireless personal area network; Abstracts; Barium; Indexes; Power amplifiers; Simulation; 60 GHz; Class E power amplifier; Class F power amplifier; millimeter wave power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits and Systems Design (SBCCI), 2012 25th Symposium on

Conference_Location

Brasilia

Print_ISBN

978-1-4673-2606-3

Type

conf

DOI

10.1109/SBCCI.2012.6344451

Filename

6344451