DocumentCode
2036406
Title
Design and analysis of low power 1-bit full adder cell
Author
Sinha, Deepa ; Sharma, Tripti ; Sharma, K.G. ; Singh, B.P.
Author_Institution
Dept. of Electron. & Commun. Eng., FET-MTS, Lakshmangarh, India
Volume
2
fYear
2011
fDate
8-10 April 2011
Firstpage
303
Lastpage
305
Abstract
In this paper low power full adder using 11 transistors has been proposed. The main idea of design is based on improving the performance of 10 transistor full adder design mentioned in literature by sacrificing a transistor count. While the proposed circuit has negligible area overhead, it has remarkably improved power consumption and temperature sustainability when compared with existing design. BSIM3v3 90 nm standard models are used for simulations on Tanner EDA tool.
Keywords
adders; logic design; low-power electronics; BSIM3v3 standard models; Tanner EDA tool; low power full adder cell; power consumption; size 90 nm; transistor full adder design; word length 1 bit; Adders; Logic gates; MOSFETs; Power demand; Very large scale integration; GDI; XOR gate; nMOS; pMOS;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Computer Technology (ICECT), 2011 3rd International Conference on
Conference_Location
Kanyakumari
Print_ISBN
978-1-4244-8678-6
Electronic_ISBN
978-1-4244-8679-3
Type
conf
DOI
10.1109/ICECTECH.2011.5941706
Filename
5941706
Link To Document