Title :
EMI-inducted failures in MOS power transistors
Author :
Bona, C. ; Fiori, F.
Author_Institution :
EMC Competence Center, Ist. Superiore Mario Boella, Turin, Italy
Abstract :
The present paper discusses the susceptibility of MOS power transistors to electromagnetic interference affecting the drain terminal. To this purpose, the low side configuration is considered and susceptibility analyses are carried out referring to simple small-signal models of the MOS transistor. The prediction of the susceptibility levels obtained in this way are validated through time domain simulations and experimental tests.
Keywords :
electromagnetic wave interference; failure analysis; power MOSFET; semiconductor device models; semiconductor device testing; time-domain analysis; EMI-inducted failures; MOS power transistors; drain terminal; electromagnetic interference; low-side configuration; small-signal models; susceptibility levels; time domain simulations; Cables; Capacitance; Character generation; Driver circuits; Electromagnetic interference; MOSFETs; Power transistors; Solenoids; Switches; Switching circuits;
Conference_Titel :
Electromagnetics in Advanced Applications, 2009. ICEAA '09. International Conference on
Conference_Location :
Torino
Print_ISBN :
978-1-4244-3385-8
Electronic_ISBN :
978-1-4244-3386-5
DOI :
10.1109/ICEAA.2009.5297367
