DocumentCode
2036486
Title
EMI-inducted failures in MOS power transistors
Author
Bona, C. ; Fiori, F.
Author_Institution
EMC Competence Center, Ist. Superiore Mario Boella, Turin, Italy
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
564
Lastpage
567
Abstract
The present paper discusses the susceptibility of MOS power transistors to electromagnetic interference affecting the drain terminal. To this purpose, the low side configuration is considered and susceptibility analyses are carried out referring to simple small-signal models of the MOS transistor. The prediction of the susceptibility levels obtained in this way are validated through time domain simulations and experimental tests.
Keywords
electromagnetic wave interference; failure analysis; power MOSFET; semiconductor device models; semiconductor device testing; time-domain analysis; EMI-inducted failures; MOS power transistors; drain terminal; electromagnetic interference; low-side configuration; small-signal models; susceptibility levels; time domain simulations; Cables; Capacitance; Character generation; Driver circuits; Electromagnetic interference; MOSFETs; Power transistors; Solenoids; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetics in Advanced Applications, 2009. ICEAA '09. International Conference on
Conference_Location
Torino
Print_ISBN
978-1-4244-3385-8
Electronic_ISBN
978-1-4244-3386-5
Type
conf
DOI
10.1109/ICEAA.2009.5297367
Filename
5297367
Link To Document