DocumentCode :
2036515
Title :
Inductively coupled plasma etching of (Pb,Sr)TiO/sub 3/ thin film in a Cl/sub 2//Ar plasma
Author :
Kim, G.H. ; Kim, D.P. ; Kim, Kyung Tae ; Kim, C.I.
Author_Institution :
Sch. of Electr. & Electron. Eng, Chung-Ang Univ., Seoul, South Korea
fYear :
2003
fDate :
5-5 June 2003
Firstpage :
402
Abstract :
Summary form only given, as follows. In this study, an inductively coupled plasma etching system was used for etching PST thin films because of its high plasma density, low process pressure and easy control bias power.
Keywords :
ferroelectric thin films; lead compounds; sputter etching; strontium compounds; (PbSr)TiO/sub 3/; Cl/sub 2/-Ar; easy control bias power; ferroelectric thin film; high plasma density; inductively coupled plasma etching; low process pressure; Argon; Dielectric thin films; Etching; Plasma applications; Plasma chemistry; Plasma density; Plasma properties; Plasma temperature; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
ISSN :
0730-9244
Print_ISBN :
0-7803-7911-X
Type :
conf
DOI :
10.1109/PLASMA.2003.1229946
Filename :
1229946
Link To Document :
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