Title :
Energy efficient 1.8 V step down DC/DC Converter in 0.18 μm CMOS technology with optimized silicon area
Author :
Panse, Prajakta ; Laxminidhi, T.
Author_Institution :
Dept. of Electron. & Commun., Nat. Inst. of Technol. Karnataka, Surathkal, India
Abstract :
We present a power efficient DC to DC Converter to step down unregulated DC voltage source of 2.7-3.6 V to the regulated 1.8 V DC. The DC to DC Converter, constituted here, is designed for the load current range of 0 to 100 mA. It offers the output voltage ripple and the steady state error less than 1% of the nominal load voltage. The step down converter switches at the frequency of 5 MHz causing substantial reduction in the size of the filter inductor and capacitor. This reduction is exploited to achieve good transient response in case of sudden load change. The Pulse Width Modulation (PWM) and Pulse Frequency Modulation (PFM) switching is used to stipulate approximately 88% of power efficiency over almost entire range of the load current. This paper also gives mathematical foundation to determine optimum size for a power switch in order to balance out the switching loss and the ON state loss of the switch under high load condition thereby it redeems the silicon real estate.
Keywords :
CMOS integrated circuits; DC-DC power convertors; PWM power convertors; transient response; CMOS technology; energy efficient step down DC/DC converter; optimized silicon area; pulse frequency modulation switching; pulse width modulation switching; size 0.18 mum; transient response; voltage 1.8 V; voltage 2.7 V to 3.6 V; DC-DC power converters; Logic gates; Pulse width modulation; Switches; Switching frequency; Switching loss; Transient response; High Switching frequency; High power efficiency; PFM; PWM; Step down DC to DC Converter;
Conference_Titel :
Electronics Computer Technology (ICECT), 2011 3rd International Conference on
Conference_Location :
Kanyakumari
Print_ISBN :
978-1-4244-8678-6
Electronic_ISBN :
978-1-4244-8679-3
DOI :
10.1109/ICECTECH.2011.5941712