Remote RF plasma cleaning for the removal of organic impurity

Summary form only given, as follows. The trends in modern silicon-based microelectronics are pointing in the direction of in-situ processing at low temperature to achieve reliable profiles and to make use of compatible processes. Low energy plasma process, called the plasma cleaning, can be used to clean silicon surfaces from the carbon contaminants and native oxide without any pretreatment of the wafers. In the integrated circuit (IC) fabrication, the photoresist (PR) ashing and PR stripping processes are generally followed the silicon etching process to remove the PR and polymerized residues. However, it was founded no tendency on surface but a benefit of the plasma treatment by means of cleaning the surface. In this work, we investigate the surface reaction of plasma generated in inductively coupled remote plasma with connection of mass spectroscopy.