ECR plasma precleaning for ZnO epitaxy on sapphire and silicon substrates

Summary form only given, as follows. Precleaning effects of the substrate in heteroepitaxial growth of ZnO were investigated. Dry cleaning techniques including UV/O/sub 3/ and ECR plasma cleaning were employed to remove organic contaminants and native oxides on the sapphire and silicon substrate prior to the epitaxial growth of ZnO by atomic layer epitaxy. The cleaning efficiency was assessed by investigating the quality of the epitaxial layer using photoluminescence, X-ray rocking scan, transmission electron microscopy and atomic force microscopy techniques.