Title :
Modeling transconductance- and capacitance-voltage characteristics of AlGaAs/GaAs HEMTs
Author :
AbdelRassoul, R.A. ; Yakout, M.A. ; AbdelFattah, A.I. ; Essa, S.G.
Author_Institution :
Electron. & Commun. Eng. Dept., Mansoura Univ., Egypt
Abstract :
A new simple and accurate analytical model for the transconductance-voltage and capacitance-voltage characteristics of AlGaAs/GaAs HEMT devices is presented. It is suitable for use in device simulation programs. The model is based on a simple formulation of the sheet carrier concentration in the two-dimensional electron gas (2-DEG) in the HEMT. The model takes into account the parasitic conduction in the AlGaAs. The model gives very good agreement with measured transconductance and capacitance characteristics for different HEMT devices.
Keywords :
HEMT circuits; III-V semiconductors; aluminium compounds; capacitance; circuit simulation; electric potential; gallium arsenide; semiconductor device models; AlGaAs-GaAs; HEMT device modeling; III-V semiconductors; analytical model; capacitance-voltage characteristics; device simulation programs; parasitic conduction; sheet carrier concentration; transconductance characteristics; two-dimensional electron gas; Analytical models; Capacitance-voltage characteristics; Electrons; Gallium arsenide; HEMTs; Knee; MODFETs; Parasitic capacitance; Transconductance; Voltage;
Conference_Titel :
Radio Science Conference, 2002. (NRSC 2002). Proceedings of the Nineteenth National
Print_ISBN :
977-5031-72-9
DOI :
10.1109/NRSC.2002.1022657
