DocumentCode :
2036686
Title :
Characteristics of Cu thin film on PET by ECR-PECVD
Author :
Jhin, J. ; Koh, Hyun-woo ; Lee, Jeyull ; Park, DaeLim ; Byun, D.
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Univ., Seoul, South Korea
fYear :
2003
fDate :
5-5 June 2003
Firstpage :
405
Abstract :
Summary form only given, as follows. Metallized polymers were prepared at an ambient temperature by an electron-cyclotron-resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) system equipped with (-)DC bias from the Cu(hfac)/sub 2/-Ar-H/sub 2/ system. Metallized polymers, and especially poly ethylene terephthalate (PET), are currently being studied and employed for microelectronic packaging, magnetic tapes, EMI shielding, etc. Copper is an attractive material for metallization thanks to its intrinsic electromigration resistance and low resistivity.
Keywords :
copper; electromagnetic shielding; integrated circuit metallisation; integrated circuit packaging; magnetic tapes; plasma CVD; plasma CVD coatings; Cu; ECR-PECVD; EMI shielding; PET; ambient temperature; electron-cyclotron-resonance plasma enhanced chemical vapor deposition; magnetic tapes; metallization; metallized polymers; microelectronic packaging; poly ethylene terephthalate; thin film; Chemical vapor deposition; Copper; Metallization; Plasma applications; Plasma chemistry; Plasma properties; Plasma temperature; Polymer films; Positron emission tomography; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
ISSN :
0730-9244
Print_ISBN :
0-7803-7911-X
Type :
conf
DOI :
10.1109/PLASMA.2003.1229952
Filename :
1229952
Link To Document :
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