Title :
Photovoltaic characteristics of a-C:H films prepared by plasma CVD
Author :
Aoki, Yuya ; Iwashige, K. ; Ohtake, N.
Author_Institution :
Dept. of Mech. Sci. & Eng., Tokyo Inst. of Technol., Japan
Abstract :
Summary form only given, as follows. In this study, we investigated photovoltaic characteristics of a-C-H films fabricated by two different deposition methods, one is RF plasma CVD (RF-PCVD) and the other is surface wave plasma CVD (SWPCVD).
Keywords :
amorphous semiconductors; carbon; elemental semiconductors; hydrogen; photovoltaic effects; plasma CVD; semiconductor growth; C:H; RF plasma CVD; RF-PCVD; a-C:H films; photovoltaic characteristics; surface wave plasma CVD; Diamond-like carbon; Optical films; Optical surface waves; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Plasma chemistry; Plasma properties; Plasma waves; Solar power generation;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1229955
