Title :
Electrical stability of the organic-inorganic material with low-k dielectric constant deposited by ICPCVD method
Author :
Oh, K.S. ; Choi, C.K.
Author_Institution :
Dept. of Phys., Cheju Nat. Univ., South Korea
Abstract :
Summary form only given, as follows. Electrical stability of the film for ultralarge scale integrated circuit (ULSI) multilevel interconnections is studied.
Keywords :
ULSI; dielectric thin films; integrated circuit interconnections; organic-inorganic hybrid materials; permittivity; plasma CVD coatings; ICPCVD method; ULSI; electrical stability; low-k dielectric constant; multilevel interconnections; organic-inorganic material; ultralarge scale integrated circuit; Annealing; Coatings; Dielectric constant; Dielectric materials; Electrons; Gases; Organic materials; Plasma materials processing; Plasma stability; Polymer films;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1229959
