Title :
Effects of ECR plasma pretreatment for the nucleation density and the crystallographic orientation of RuO/sub 2/ deposited on the TiN substrate by MOCVD
Author :
Taejong Eom ; Choi, Kyuosuk ; Shin, Kyungchul ; Lee, Chongmu
Author_Institution :
Dept. of Material Sci. & Eng., Inha Univ., Incheon, South Korea
Abstract :
Summary form only given, as follows. For the deposition of RuO/sub 2/ on TiN films by metal organic chemical vapor deposition (MOCVD), precleaning of the TiN film surface by plasma treatment is essential to enhance the nucleation density of RuO/sub 2/. In this study effects of ECR plasma treatment using hydrogen, oxygen, and argon on the nucleation density and the crystallographic orientation of RuO/sub 2/ deposited by MOCVD were investigated using scanning electron microscopy (SEM), resistivity measurements, Auger electron emission spectrometry (AES) and X-ray diffraction (XRD).
Keywords :
Auger electron spectra; MOCVD; MOCVD coatings; X-ray diffraction; crystal orientation; nucleation; plasma materials processing; ruthenium compounds; scanning electron microscopy; surface resistance; surface treatment; AES; Auger electron emission spectrometry; ECR plasma pretreatment; MOCVD; RuO/sub 2/; SEM; TiN; X-ray diffraction; crystallographic orientation; metal organic chemical vapor deposition; nucleation density; resistivity; scanning electron microscopy; surface precleaning; Chemical vapor deposition; Crystallography; Electron emission; MOCVD; Organic chemicals; Plasma chemistry; Plasma density; Scanning electron microscopy; Surface treatment; Tin;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1229961
