DocumentCode :
2036928
Title :
ITO transparent gates over Si3N4 layer for a novel IT-CCD image sensor with reduced VOD structure
Author :
Abdallah, S. ; Saleh, B. ; Aboulsoud, A.K.
Author_Institution :
Electron. & Commun. Dept., Arab Acad. for Sci. & Tech, Alexandria, Egypt
fYear :
2002
fDate :
2002
Firstpage :
565
Lastpage :
574
Abstract :
A newly modified architecture using Indium Tin Oxide (ITO) transparent gates is being tested to increase the photosensitivity of solid state image sensors. Applying it to the newly Inter Line Charge Coupled Devices (IT-CCD) with a reduced Vertical Overflow Drain (VOD) shutter voltage structure over a layer of Si3N4, its photo-responsivity was increased nearly 60% compared to that of the conventional poly-Si-gates, and about 10-20% to that of the thick/thin backside-illuminated solid state image sensor structures. Eventually its transmittivity, and its Quantum Efficiency (QE) are also improved along the light spectrum. In addition, in the blue/green region of the spectrum, about 5% improvement in the photo-responsivity of the newly reduced VOD IT-CCD image sensor structure could be seen, as well as about 10% improvement in the Infra. Red (IR)-region, compared to its previously used structure using only a layer of Si3N4 film.
Keywords :
CCD image sensors; antireflection coatings; indium compounds; sensitivity; silicon compounds; transparency; IR region; IT-CCD image sensor; ITO; ITO transparent gates; InSnO; Si3N4; Si3N4 layer; infrared region; inter line CCD; inter line charge coupled devices; modified architecture; photosensitivity improvement; quantum efficiency improvement; solid state image sensors; vertical overflow drain shutter voltage structure; CMOS image sensors; Charge-coupled image sensors; Consumer electronics; Image sensors; Indium tin oxide; Optical films; Optical sensors; Optical transmitters; Silicon; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Science Conference, 2002. (NRSC 2002). Proceedings of the Nineteenth National
Print_ISBN :
977-5031-72-9
Type :
conf
DOI :
10.1109/NRSC.2002.1022667
Filename :
1022667
Link To Document :
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