DocumentCode
2036986
Title
Influences of microwave plasma power on the structure of amorphous hydrogenated carbon deposited by ECRCVD
Author
Myoung-Gyun Ko ; Jong-Wan Park
Author_Institution
Dept. of Nano-Struct. Semicond. Eng., Hanyang Univ., Seoul, South Korea
fYear
2003
fDate
5-5 June 2003
Firstpage
411
Abstract
Summary form only given, as follows. The film is prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) employing CH/sub 4/ and H/sub 2/ gases. It is deposited by the control of microwave plasma power, gas flow ratio, deposition pressure, and in-situ thermal treatment temperature. The structure of a-C:H thin film is analysed by FTIR spectroscopy.
Keywords
Fourier transform spectra; amorphous semiconductors; annealing; carbon; elemental semiconductors; hydrogen; infrared spectra; plasma CVD; plasma CVD coatings; C:H; ECRCVD film structure; FTIR spectra; a-C:H thin film; electron cyclotron resonance chemical vapor deposition; gas flow ratio; in-situ thermal treatment temperature; microwave plasma power; Amorphous materials; Chemical vapor deposition; Cyclotrons; Electrons; Gases; Plasma chemistry; Plasma temperature; Pressure control; Resonance; Temperature control;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location
Jeju, South Korea
ISSN
0730-9244
Print_ISBN
0-7803-7911-X
Type
conf
DOI
10.1109/PLASMA.2003.1229963
Filename
1229963
Link To Document