Title :
Influences of microwave plasma power on the structure of amorphous hydrogenated carbon deposited by ECRCVD
Author :
Myoung-Gyun Ko ; Jong-Wan Park
Author_Institution :
Dept. of Nano-Struct. Semicond. Eng., Hanyang Univ., Seoul, South Korea
Abstract :
Summary form only given, as follows. The film is prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) employing CH/sub 4/ and H/sub 2/ gases. It is deposited by the control of microwave plasma power, gas flow ratio, deposition pressure, and in-situ thermal treatment temperature. The structure of a-C:H thin film is analysed by FTIR spectroscopy.
Keywords :
Fourier transform spectra; amorphous semiconductors; annealing; carbon; elemental semiconductors; hydrogen; infrared spectra; plasma CVD; plasma CVD coatings; C:H; ECRCVD film structure; FTIR spectra; a-C:H thin film; electron cyclotron resonance chemical vapor deposition; gas flow ratio; in-situ thermal treatment temperature; microwave plasma power; Amorphous materials; Chemical vapor deposition; Cyclotrons; Electrons; Gases; Plasma chemistry; Plasma temperature; Pressure control; Resonance; Temperature control;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1229963
