Title :
3D-TCAD simulation study of an electrically induced Source/drain cylindrically surrounding gate MOSFETs for reduced SCEs and HCEs
Author :
Gupta, Santosh Kumar ; Baishya, Srimanta
Author_Institution :
Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Silchar, Silchar, India
Abstract :
In this paper a three dimensional simulation study of a cylindrically surrounding gate with electrically induced source/drain shallow junction has been carried out to demonstrate the ability of this device to overcome the short channel and hot carrier effects. The surface potential, electric field and the electron temperatures in the channel region has been taken to assess the device performance. It has been found that this device is capable of overcoming effectively the short channel and hot carrier effects.
Keywords :
MOSFET; digital simulation; electronic engineering computing; technology CAD (electronics); 3D-TCAD simulation study; HCE; SCE; channel region; electric field; electrical induced source-drain cylindrical surrounding gate MOSFET; electron temperatures; hot carrier effects; short channel effects; three dimensional TCAD simulation study; Electric fields; Electric potential; Hot carrier effects; Junctions; Logic gates; MOSFETs; Threshold voltage; Induced source/drain shallow junction; TCAD; cylindrical surrounding gate MOSFET; hot carrier effects; short channel effects;
Conference_Titel :
Electronics Computer Technology (ICECT), 2011 3rd International Conference on
Conference_Location :
Kanyakumari
Print_ISBN :
978-1-4244-8678-6
Electronic_ISBN :
978-1-4244-8679-3
DOI :
10.1109/ICECTECH.2011.5941732
