DocumentCode :
2037570
Title :
Electrical characteristics of the dual frequency capacitively coupled plasma (CCP)
Author :
Jeon, B.I. ; Chang, H.Y.
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear :
2003
fDate :
5-5 June 2003
Firstpage :
423
Abstract :
Summary form only given, as follows. The electrical characteristics of the dual frequency capacitively coupled plasma (CCP) was measured. Applied RF power was deposited by ions when we use low frequency and an applied RF power was deposited by electrons when we use high frequency. This means that low frequency enhances the ion acceleration energy to the electrode and high frequency enhances the plasma density. We could control these two power dissipation mechanisms by using dual frequency (high frequency + low frequency).
Keywords :
high-frequency discharges; dual frequency capacitively coupled plasma; high frequency; low frequency; Acceleration; Electric variables; Electric variables measurement; Electrons; Frequency measurement; Plasma accelerators; Plasma density; Plasma measurements; Plasma properties; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
ISSN :
0730-9244
Print_ISBN :
0-7803-7911-X
Type :
conf
DOI :
10.1109/PLASMA.2003.1229986
Filename :
1229986
Link To Document :
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