A 90 nm CMOS 10 GHz beam forming transmitter

Author

Wernehag, Johan ; Sjoland, Henrik

Author_Institution

Dept. of Electroscience, Lund Univ., Sweden

Volume

1

fYear

2005

fDate

14-15 July 2005

Firstpage

375

Abstract

A 10 GHz beam forming transmitter was designed in a 90 nm CMOS process. Two power amplifiers with independently controllable phase enable the beam forming. The controllable phase is accomplished by switching in binary weighted transistors fed by quadrature signals, which are generated by a quadrature voltage controlled oscillator followed by a buffer. The design contains seven differential on-chip inductors, and consumes a total of 44.0 mA from a 1.2 V supply. The desired output power of 5 dBm per power amplifier is delivered at a power added efficiency of 22 % for the power amplifier.

Keywords

CMOS integrated circuits; buffer circuits; microwave integrated circuits; microwave power amplifiers; radio transmitters; voltage-controlled oscillators; 1.2 V; 10 GHz; 44.0 mA; 90 nm; CMOS process; beam forming transmitter; binary weighted transistor; buffer; controllable phase; on-chip inductor; power added efficiency; power amplifier; quadrature signal; quadrature voltage controlled oscillator; CMOS technology; Circuits; Frequency; Impedance; Inductors; Power amplifiers; Power generation; Radio transmitters; Voltage-controlled oscillators; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Circuits and Systems, 2005. ISSCS 2005. International Symposium on

Print_ISBN

0-7803-9029-6

Type

conf

DOI

10.1109/ISSCS.2005.1509934

Filename

1509934