Plasma enhanced chemical vapor deposition of silicon oxide films and silicon oxynitride films using TMOS/O/sub 2//N/sub 2/ gas and plasma diagnostics

Summary form only given, as follows. Summary form only given. Thin oxide films and oxynitride films are deposited from tetramethoxysilane in an inductively coupled oxygen glow discharge supplied with radio frequency power. The deposition rate and the chemical bonding states of deposited films are analyzed by ellipsometry and by Fourier Transform Infrared spectroscopy, respectively, and the intensities of light emission from molecules and radicals in the plasma are measured by optical emission spectroscopy. Langmuir probe is employed to estimate the plasma density and electron temperature, plasma potential, and electron energy distribution functions (EEDFs). The radial distributions of these plasma parameters are also measured. With these tools, the effects of parameters such as rf input power, substrate bias power, oxygen and nitrogen partial pressure ratios, total pressure on the properties of the film and of the plasma ire investigated. The correlation between the properties of the film and the characteristics of the plasma are explained wherever possible.