Title :
An integrated CMOS high power amplifier using power combining technique
Author :
Wang, Yiheng ; Yuan, Jiann-Shiun
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
A fully integrated power amplifier using the transformer type power combiner is presented. The power amplifier contains two transformers to lead to high output power with small chip size. The parallel combining transformer is realized with 1:1 turn ratio. The transformers are incorporated into the design of power amplifier in a standard 0.18 μm CMOS technology. The power amplifier with built-in power combiner delivers 23.4 dBm of output power at 5.2 GHz with 3.3 V supply voltage.
Keywords :
CMOS analogue integrated circuits; field effect MMIC; microwave power amplifiers; power combiners; built-in power combiner; frequency 5.2 GHz; fully integrated power amplifier; integrated CMOS high power amplifier; size 0.18 mum; transformer type power combiner; voltage 3.3 V; CMOS integrated circuits; CMOS technology; Layout; Power amplifiers; Power combiners; Power generation; Simulation; CMOS; Power amplifier (PA); power combiner; transformer;
Conference_Titel :
Southeastcon, 2012 Proceedings of IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4673-1374-2
DOI :
10.1109/SECon.2012.6196999
