Title :
The characteristics of dielectric properties of SiOC film with the variation of bonding angle on the Si-O-C structure
Author :
Chang Sil Yang ; Young Hun Yu ; Chi Kyu Choi
Author_Institution :
Dept. of Phys., Cheju Nat. Univ., Jeju, South Korea
Abstract :
Summary form only given, as follows. Carbon doped silicon oxide (SiOC) with low dielectric films were deposited on a p-type Si(100) substrate using a mixture gases of bis-trimethysilymethane (BTMSM) and oxygen gas by an inductively coupled plasma chemical vapor deposition. The Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy spectra used to investigate the porosity and the atomic concentration in the film.
Keywords :
Fourier transform spectra; X-ray photoelectron spectra; bond angles; dielectric thin films; infrared spectra; plasma CVD coatings; porosity; silicon compounds; Fourier transform infrared spectroscopy; Si; SiOC; X-ray photoelectron spectroscopy; bonding angle; dielectric properties; inductively coupled plasma chemical vapor deposition; low dielectric films; p-type Si(100) substrate; porosity; Bonding; Chemical vapor deposition; Dielectric films; Dielectric substrates; Fourier transforms; Gases; Plasma chemistry; Plasma properties; Plasma x-ray sources; Silicon;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1229994
