Title :
Thermal treatment of InGaAs/GaAs self-assembled quantum dots with PECVD-grown SiO/sub 2/ capping layer
Author :
Hwang, Su Hwan ; Shin, Jae Cheol ; Choi, W.J. ; Park, Y.M. ; Song, J.D. ; Park, Young June ; Han, I.K. ; Cho, W.J. ; Lee, J.I. ; Choe, J.W.
Author_Institution :
Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
Summary form only given, as follows. Summary form only given. Intermixing effects of MBE (Molecular Beam Epitaxy) grown InGaAs SAQDs (Self-Assembled Quantum Dots) covered with SiO/sub 2/ dielectric capping layers, which was grown by PECVD, were investigated. After the thermal annealing, photoluminescence (PL) measurement has been carried for the optical characterization at the room temperature quantum well with PECVD-grown SiO/sub 2/ capping layer.
Keywords :
III-V semiconductors; annealing; chemical interdiffusion; dielectric thin films; gallium arsenide; indium compounds; photoluminescence; plasma CVD coatings; self-assembly; semiconductor quantum dots; silicon compounds; InGaAs-GaAs; InGaAs/GaAs self-assembled quantum dots; MBE; PECVD; PECVD-grown SiO/sub 2/ capping layer; SiO/sub 2/; SiO/sub 2/ dielectric capping layers; intermixing effects; optical characterization; photoluminescence; thermal annealing; thermal treatment; Annealing; Dielectric substrates; Gallium arsenide; Gases; Indium gallium arsenide; Molecular beam epitaxial growth; Plasma temperature; Quantum dots; Semiconductor films; US Department of Transportation;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1229995
