Thermal treatment of InGaAs/GaAs self-assembled quantum dots with PECVD-grown SiO/sub 2/ capping layer

Author

Hwang, Su Hwan ; Shin, Jae Cheol ; Choi, W.J. ; Park, Y.M. ; Song, J.D. ; Park, Young June ; Han, I.K. ; Cho, W.J. ; Lee, J.I. ; Choe, J.W.

Author_Institution

Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea

fYear

2003

fDate

5-5 June 2003

Firstpage

427

Abstract

Summary form only given, as follows. Summary form only given. Intermixing effects of MBE (Molecular Beam Epitaxy) grown InGaAs SAQDs (Self-Assembled Quantum Dots) covered with SiO/sub 2/ dielectric capping layers, which was grown by PECVD, were investigated. After the thermal annealing, photoluminescence (PL) measurement has been carried for the optical characterization at the room temperature quantum well with PECVD-grown SiO/sub 2/ capping layer.

Keywords

III-V semiconductors; annealing; chemical interdiffusion; dielectric thin films; gallium arsenide; indium compounds; photoluminescence; plasma CVD coatings; self-assembly; semiconductor quantum dots; silicon compounds; InGaAs-GaAs; InGaAs/GaAs self-assembled quantum dots; MBE; PECVD; PECVD-grown SiO/sub 2/ capping layer; SiO/sub 2/; SiO/sub 2/ dielectric capping layers; intermixing effects; optical characterization; photoluminescence; thermal annealing; thermal treatment; Annealing; Dielectric substrates; Gallium arsenide; Gases; Indium gallium arsenide; Molecular beam epitaxial growth; Plasma temperature; Quantum dots; Semiconductor films; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Conference_Location

Jeju, South Korea

ISSN

0730-9244

Print_ISBN

0-7803-7911-X

Type

conf

DOI

10.1109/PLASMA.2003.1229995

Filename

1229995