DocumentCode :
2037880
Title :
Detection wavelength tuning of infrared-photodetector by thermal treatment of AlGaAs/GaAs
Author :
Hwang, Su Hwan ; Shin, Jae Cheol ; Choi, W.J. ; Park, Y.M. ; Song, J.D. ; Park, Young June ; Han, I.K. ; Cho, W.J. ; Lee, J.I. ; Han, Hu
Author_Institution :
Nan Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
fYear :
2003
fDate :
5-5 June 2003
Firstpage :
428
Abstract :
Summary form only given, as follows. Summary form only given. Detection wavelength tuning of a quantum well infrared photodetector (QWIP) has been carried out by using the dielectric cap quantum well intermixing technique with plasma enhanced chemical vapor deposited SiO/sub 2/ capping layer.
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; dielectric thin films; gallium arsenide; heat treatment; infrared detectors; plasma CVD coatings; quantum well devices; silicon compounds; AlGaAs-GaAs; AlGaAs/GaAs; QWIP; SiO/sub 2/; detection wavelength tuning; dielectric cap quantum well intermixing technique; infrared-photodetector; plasma enhanced chemical vapor deposited SiO/sub 2/ capping layer; quantum well infrared photodetector; thermal treatment; Electric resistance; Gallium arsenide; Infrared detectors; Nitrogen; Palladium; Plasma density; Plasma waves; Thermal degradation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
ISSN :
0730-9244
Print_ISBN :
0-7803-7911-X
Type :
conf
DOI :
10.1109/PLASMA.2003.1229996
Filename :
1229996
Link To Document :
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