Title :
Electroless Cu deposition on NH/sub 3/ plasma treated TaN
Author :
Yong Sun Lee ; Jong-Wan Park
Author_Institution :
Div. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
Abstract :
Summary form only given, as follows. Summary form only given. Electroless Cu on NH/sub 3/ plasma treated TaN/sub x/ films was investigated to reduce the electrical resistivity without quality degradation of electroless Cu films. The electrical resistivity of the NH/sub 3/ plasma treated TaN/sub x/ barriers is increased by less than 10 % compared with the TaN/sub x/ barriers without plasma treatment.
Keywords :
ammonia; copper; diffusion barriers; electrical resistivity; electroless deposition; field emission electron microscopy; integrated circuit metallisation; metallic thin films; plasma materials processing; scanning electron microscopy; tantalum compounds; Cu; FE-SEM; NH/sub 3/; NH/sub 3/ plasma treated TaN; TaN; electrical resistivity; electroless Cu deposition; electroless Cu films; plasma treatment; quality degradation; Degradation; Electric resistance; Nitrogen; Palladium; Plasma density;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1229997
