Recrystallization by annealing on the copper films deposited by pulsed electroplating on the ECR plasma cleaned copper seed layer

Summary form only given, as follows. Summary form only given. Cu seed layers deposited by magnetron sputtering onto the tantalum nitride barrier film were given ECR plasma treatment to enhance Cu nucleation prior to Cu electroplating. The copper films were electrodeposited and annealed by various processes such as vacuum furnace annealing, rapid thermal annealing and rapid thermal nitridation at various temperatures. It appears that as a result of annealing above 400 C, the copper film undergoes a complete recrystallization.