Atom recombination on SiO/sub 2/ and Si(100) surfaces

Summary form only given, as follows. The probability of recombination was measured for recombination of hydrogen and oxygen atoms on SiO/sub 2/ and Si(100) surfaces at 298 K, 500 K, 700 K, 900 K and 1100 K in the range of 0.1 torr with hydrogen and oxygen gas. The probability of recombination was a first order reaction with respect to the atom concentration from 298 K to 1100 K. The Arrhenius plots were very complex. All observations were explained by assuming a surface with a small fraction of active sites that irreversibly bind chemisorbed atoms. We have proposed a process of atom recombination at the surface active sites.