Title :
Low-power /spl mu/ wave plasma source for microsystems
Author :
Iza, Felipe ; Hopwood, Jeffrey
Author_Institution :
Northeastern Univ., Boston, MA, USA
Abstract :
Summary form only given, as follows. Microplasma sources can be integrated within portable devices for applications such as bio-MEMs sterilization, small-scale materials processing, and micro chemical analysis systems. Portable operation of microplasma sources, however, places a limit on the amount of power and the vacuum levels that can be employed in the plasma source. A low-power microwave plasma source based on a microstrip split-ring resonator has been fabricated and characterized. The microstrip is formed in the shape of a 16-mm i d ring with a 500-/spl mu/m gap in which the discharge is formed The plasma source operates at 900 MHz and presents a quality factor of Q = 335. This quality factor is an order of magnitude greater than in microfabricated inductively coupled plasma sources operating in the same frequency range. The high Q value of the plasma source allows low-power (high-efficiency) operation up to atmospheric pressure. Argon and air discharges can be self-started with less than 3 W in a relatively wide pressure range. At low pressure, the discharge forms a diffuse plasma that extends beyond the discharge gap in the split-ring resonator.
Keywords :
argon; high-frequency discharges; plasma sources; 900 MHz; Ar; Ar discharge; air discharge; low-power; microplasma sources; microstrip split-ring resonator; microwave plasma source; quality factor; Argon; Chemical analysis; Fault location; Frequency; Materials processing; Microstrip resonators; Microwave devices; Plasma sources; Q factor; Shape;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1230014