DocumentCode
2038577
Title
Effect of third harmonic peaking in gate drive of class E amplifier
Author
Yano, Shoko ; Shutou, Kouta ; Suetsugu, Tadashi
Author_Institution
Dept. of Electron. Eng. & Comput. Sci., Fukuoka Univ., Fukuoka, Japan
fYear
2010
fDate
21-24 Nov. 2010
Firstpage
1792
Lastpage
1795
Abstract
In this paper, in order to reduce power dissipation at MOSFET gate port of class E amplifier, we propose gate signal peaking using third harmonic component. With PSPICE simulation, it is shown that higher power efficiency and higher output power of power stage can be obtained using third harmonic component than pure sinusoidal gate signal with same level of gate power dissipation.
Keywords
MOSFET; SPICE; power amplifiers; MOSFET gate port; PSPICE simulation; class E amplifier; gate drive; gate signal peaking; power dissipation reduction; sinusoidal gate signal; third harmonic peaking;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location
Fukuoka
ISSN
pending
Print_ISBN
978-1-4244-6889-8
Type
conf
DOI
10.1109/TENCON.2010.5686060
Filename
5686060
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