Title :
Modeling of N/sub 2//H/sub 2/ plasma for low-K material etching in a capacitively coupled plasma device
Author :
Shon, C.H. ; Makabe, T.
Author_Institution :
Keio Univ., Yokohama, Japan
Abstract :
Summary form only given, as follows. In this research, we present the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with H/sub 2//N/sub 2/ gas mixture which includes neutral-species transport model, based on the relaxation continuum (RCT) model. Not only the plasma transport and spatial distribution, but also those of neutral gas are important issue for the etching process.
Keywords :
gas mixtures; hydrogen; nitrogen; plasma simulation; plasma transport processes; sputter etching; N/sub 2/-H/sub 2/; capacitively coupled plasma device; etching process; gas mixture; low-K material etching; modeling results; neutral-species transport model; plasma transport; relaxation continuum model; spatial distribution; two-frequency capacitively coupled plasma; Electrons; Etching; Image motion analysis; Kernel; Monte Carlo methods; Particle beam optics; Physics; Plasma applications; Plasma devices; Plasma materials processing;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1230051
