Using Die to chip carrier wire bond transition to build a 4th order differential LP filter for 10 Gpbs O/E receiver

Author

Cubillo, J.R. ; Gaubert, J. ; Bourdel, S.

Author_Institution

Dept. Micro-Electron. et Telecommun. Technopole de Chateau Gombert, IM2NP, Marseille

fYear

2008

fDate

12-15 May 2008

Firstpage

1

Lastpage

4

Abstract

We present in this paper a simple way to integrate a 4th order low pass filter (LPF) Bessel Thompson function with the help of the Die´s wirebond attaches from a trans-impedance amplifier (TIA) Die in an opto-electrical receiver (O/E Rx). Additional RF distributed microstripline elements on the O/E Rx chip carrier substrate will complete the LPF topology. This way the die to chip carrier transition is fully embedded in the LPF structure, and eliminates the needs of an additional die and wirebond attaches for the LPF function.

Keywords

Bessel functions; lead bonding; low-pass filters; microstrip lines; receivers; Bessel Thompson function; RF distributed microstripline elements; chip carrier transition; die to chip carrier; differential low pass filter; opto-electrical receiver; transimpedance amplifier; wire bond transition; Bit error rate; Bonding; Capacitance; Crosstalk; Filters; Noise shaping; Optical noise; Packaging; SONET; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Propagation on Interconnects, 2008. SPI 2008. 12th IEEE Workshop on

Conference_Location

Avignon

Print_ISBN

978-1-4244-2317-0

Electronic_ISBN

978-1-4244-2318-7

Type

conf

DOI

10.1109/SPI.2008.4558345

Filename

4558345