Title :
Atom Probe Characterization of Magnetic and Semiconductor Device Structures
Author :
Larson, D.J. ; Thompson, K.
Author_Institution :
Imago Sci. Instrum. Corp., Madison, WI
Abstract :
The application of atom probe analysis to a variety of material systems in semiconductor and magnetic recording industries is discussed. Discussion includes SiGe layered structures, transistor-based structures,magnetoresistive spin valves, tunnel junctions, current-confined path spin valve structures and perpendicular recording media
Keywords :
Ge-Si alloys; atom probe field ion microscopy; electronics industry; magnetic heads; magnetic tunnelling; perpendicular magnetic recording; semiconductor junctions; semiconductor materials; spin valves; tunnel transistors; SiGe; SiGe layered structures; atom probe analysis; current confined path spin valves; magnetic devices; magnetic recording; magnetostrictive spin valves; perpendicular recording media; semiconductor device structures; transistors; tunnel junctions; Atomic layer deposition; Magnetic analysis; Magnetic devices; Magnetic materials; Magnetic semiconductors; Perpendicular magnetic recording; Probes; Semiconductor devices; Semiconductor materials; Spin valves;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335305
