Title :
Transition from Fowler-Nordheim to Child-Langmuir Law in the quantum regime
Author :
Koh, W. S. ; Ang, L. K.
Author_Institution :
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798; Institute of High Performance Computing, Singapore 117528
Abstract :
A detailed quantum mechanical analysis of the current-voltage characteristics of a 1D planar nanodiode showing the transition from Fowler-Nordheim to quantum Child-Langmuir (CL) law in high current regime is presented. Results reveal that at 1000 nm gap spacing (D), the transition follows the classical CL law that the saturation limit at high electric field approaches the normalized self-consistent field emission current density. The influence of different cathode materials with different work functions and temperature is presented
Keywords :
SCF calculations; cathodes; current density; diodes; electron field emission; quantum theory; tunnelling; work function; 1D planar nanodiodes; Fowler-Nordheim law; cathode materials; current-voltage characteristics; gap spacing; normal self consistent field emission current density; quantum Child-Langmuir law; quantum mechanics; work function; Barium; Cathodes; Current density; Electrons; Elementary particle vacuum; High performance computing; Nanoelectronics; Particle beams; Physics computing; Quantum computing;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335310
