Title :
Power dissipation at MOSFET gate port of class D RF power amplifier
Author :
Kudo, Takuya ; Umeki, Toru ; Kiri, Akito ; Suetsugu, Tadashi
Author_Institution :
Dept. Electron. Eng. & Comput. Sci., Fukuoka Univ., Fukuoka, Japan
Abstract :
In this paper, gate port power dissipation of class D amplifier is obtained as a function of amplitude and offset of drive signal with Pspice simulation. It is found that the amplitude of gate signal should be higher than 4 V in order to keep 80% efficiency in power stage of class D amplifier.
Keywords :
MOSFET; power amplifiers; radiofrequency amplifiers; MOSFET gate port; Pspice simulation; class D RF power amplifier; gate port power dissipation; gate signal amplitude;
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-6889-8
DOI :
10.1109/TENCON.2010.5686117
