Title :
Electron Field Emission Properties of Co Quantum Dots in SiO2 Matrix Synthesised by Ion Implantation
Author :
Tsang, W.M. ; Stolojan, V. ; Sealy, B.J. ; Wong, S.P. ; Silva, S.R.P.
Author_Institution :
Nano-Electron. Centre, Surrey Univ., Guildford
Abstract :
Crystallised Co nanoparticles were synthesized by Co+ implantation onto thermally oxidised SiO2 layers on silicon substrate. The implantation energy was 50 keV and the doses ranged from 1 to 7times1016 Co+/cm2. The possibility of controlling the size and distribution of the nanoclusters by changing implantation conditions (e.g. dose and energy) is the main advantage of this technique. Atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (X-TEM) were used to characterize the nanoclusters. The staircase I-V curve also shows that the metallic quantum dots embedded in a thin SiO2 layer on silicon substrate has effective Coulomb blockade at room temperature
Keywords :
Coulomb blockade; atomic force microscopy; electron field emission; ion implantation; metal clusters; nanocomposites; nanoparticles; quantum dots; transmission electron microscopy; 50 keV; AFM; Co-SiO2; I-V curve; Si; X-TEM; atomic force microscopy; cross-sectional transmission electron microscopy; crystallised nanoparticles; electron field emission properties; implantation energy; ion implantation; metallic quantum dots; nanoclusters; nanocomposites; room temperature effective Coulomb blockade; silicon substrate; thermal oxidation; Atomic force microscopy; Atomic layer deposition; Crystallization; Electron emission; Ion implantation; Nanoparticles; Quantum dots; Silicon; Size control; Transmission electron microscopy;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335345