Title :
Design of a Wide Angle Laser Assited Tomographic Atom Probe
Author :
Deconihout, B. ; Vurpillot, F. ; Gault, B. ; Gilbert, M. ; Vella, A. ; Bostel, A. ; Da Costa, G. ; Menand, A. ; Blavette, D.
Author_Institution :
Groupe de Phys. des Materiaux, UMR CNRS, Saint-Etienne du Rouvray
Abstract :
A wide angle tomographic atom probe has been designed in which the field evaporation of atoms is assisted by subpicosecond laser pulses. It has been shown that the field evaporation is due to the generation of a THz pulse due to the rectification of the optical field at the specimen surface. The very short duration of the pulsed field (a few hundred fs) offers several advantages as compared to conventional pulsing method. First, it makes possible to bring intense electric field at the surface of resistive specimens opening the field of application of the atom probe tomography to new materials such as oxydes or semiconductors. Second, a high mass resolution can be achieved in a straight type configuration allowing to fully open the field of view in order to collect the whole amount of data available from field emitter specimens. Third, because the pulse duration is below the phonon vibration time, no cycling stress in applied on the specimen during the analysis. As a result, very fragile materials can be investigated by APT. In addition, this makes possible to investigate materials at very low temperature making the spatial resolution better. In this contribution, the design of the LaWaTAP will be presented and the performance of the instrument discussed through some applications to metals, oxydes and semiconductors
Keywords :
high-speed optical techniques; optical tomography; APT; atom probe tomography; field atom evaporation; field evaporation; metals; optical field rectification; oxydes; phonon vibration time; semiconductors; spatial resolution; subpicosecond laser pulses; wide angle laser assisted tomographic atom probe; Atom lasers; Atom optics; Atomic beams; Optical design; Optical pulse generation; Optical pulses; Probes; Semiconductor materials; Surface emitting lasers; Tomography;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335349