Title :
Laser Atom Probe Tomography: some applications
Author :
Blavette, D. ; Cadel, E. ; Mangelinck, D. ; Hoummada, K. ; Lardé, R. ; Vurpillot, F. ; Gault, B. ; Vella, A. ; Pareige, P. ; Houard, J. ; Deconihout, B.
Author_Institution :
Groupe de Phys. des Materiaux, CNRS, Marseille
Abstract :
Laser atom probe tomography was used to investigate the inter-diffusive reactions at the silicon-nickel interface. The early stages of formation of a NiSi silicide was studied. The addition of Pt was shown to increase the temperature of formation of the high resistivity NiSi2 phase by approximately 150 degC
Keywords :
chemical interdiffusion; electrical resistivity; elemental semiconductors; nickel; optical tomography; remote sensing by laser beam; silicon; Ni-Si; NiSi2; formation temperature; interdiffusive reactions; laser atom probe tomography; resistivity; silicide; silicon-nickel interface; Atom lasers; Atomic beams; Conductivity; Instruments; Laser theory; Microelectronics; Optical pulses; Probes; Silicides; Tomography;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335352
