• DocumentCode
    2040416
  • Title

    Laser Atom Probe Tomography: some applications

  • Author

    Blavette, D. ; Cadel, E. ; Mangelinck, D. ; Hoummada, K. ; Lardé, R. ; Vurpillot, F. ; Gault, B. ; Vella, A. ; Pareige, P. ; Houard, J. ; Deconihout, B.

  • Author_Institution
    Groupe de Phys. des Materiaux, CNRS, Marseille
  • fYear
    2006
  • fDate
    38899
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    Laser atom probe tomography was used to investigate the inter-diffusive reactions at the silicon-nickel interface. The early stages of formation of a NiSi silicide was studied. The addition of Pt was shown to increase the temperature of formation of the high resistivity NiSi2 phase by approximately 150 degC
  • Keywords
    chemical interdiffusion; electrical resistivity; elemental semiconductors; nickel; optical tomography; remote sensing by laser beam; silicon; Ni-Si; NiSi2; formation temperature; interdiffusive reactions; laser atom probe tomography; resistivity; silicide; silicon-nickel interface; Atom lasers; Atomic beams; Conductivity; Instruments; Laser theory; Microelectronics; Optical pulses; Probes; Silicides; Tomography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
  • Conference_Location
    Guilin
  • Print_ISBN
    1-4244-0401-0
  • Type

    conf

  • DOI
    10.1109/IVNC.2006.335352
  • Filename
    4134459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2040416