Integrated 1.55 μm and 1.3 μm DFB laser-electro absorption modulators with identical active layer structure composed of two QW types

We report the improved performance of a monolithically integrated 1.55 μm ridge waveguide DFB laserdiode with an electro absorption modulator using the identical active multiple quantum layer structure composed of two different quantum well types. For the first time, this approach was successfully transferred to devices operating at 1.3 μm. Minimum threshold currents of 20 mA and 17 mA are obtained for 1.55 μm and 1.3 μm devices, respectively. With a voltage swing of 1.5 V, we achieve an extinction ratio ≥10 dB and the 3-dBe cutoff frequency of 200 μm long modulators exceeds 15 GHz.