Title :
Widegap II-VI compound optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells
Author :
Abe, T. ; Yamada, H. ; Itano, N. ; Kasada, H. ; Ando, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tottori Univ., Japan
Abstract :
We report on widegap II-VI compound short wavelength optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells (ACQWs). Effective mass approximated calculations have shown that ZnSe(50Å)-ZnMgSSe(30Å)-ZnSe(20Å) ACQW exhibits weak Stark effect region (<40 kV/cm) and strong Stark effect region (>40 kV/cm). These simulations are experimentally confirmed by a p-i-n structure ACQW modulator grown by molecular beam epitaxy (MBE). The present device exhibits a low reverse bias operation (∼8 V) with modulation ratio(Ton/Toff) of 1.08 at room temperature.
Keywords :
II-VI semiconductors; effective mass; electro-optical modulation; magnesium compounds; molecular beam epitaxial growth; quantum confined Stark effect; quantum well devices; wide band gap semiconductors; zinc compounds; ZnSe-ZnMgSSe; ZnSe/ZnMgSSe asymmetric coupled quantum well; effective mass approximation; molecular beam epitaxy; p-i-n structure; quantum confined Stark effect; widegap II-VI compound short wavelength optical modulator; Molecular beam epitaxial growth; Optical coupling; Optical devices; Optical modulation; PIN photodiodes; Quantum well devices; Stark effect; Stationary state; Temperature; Zinc compounds;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022890
