Title :
ZnTe-based materials for fight-emitting-devices
Author :
Chang, J.H. ; Takai, T. ; Koo, B.H. ; Song, J.S. ; Yao, T.
Author_Institution :
Inst. of Mater. Res., Tohoku Univ., Sendai, Japan
Abstract :
High crystal quality n-type ZnTe layers are achieved by molecular beam epitaxy (MBE) using Aluminum as a dopant species. The x-ray diffraction (XRD) measurements indicate lattice contraction due to substitutional incorporation of Al and the narrow fine-width of ZnTe:Al layer (24 arcsecs) shows high structural quality of the ZnTe:Al layers. Hall effect measurement of ZnTe:Al layers exhibits the highest carrier concentration of N/sub d/ = 4 /spl times/ 10/sup 18/ cm/sup -3/. Both n- and p-type ZnMgSeTe quaternaries are prepared by Al- and N-doping, respectively. The relationship between energy gap and carrier concentrations is investigated. To demonstrate device operation, Zn(Cd)Te/ZnMgSeTe light-emitting diode (LED) structure is fabricated and room temperature current injected operation is observed.
Keywords :
Hall effect; II-VI semiconductors; X-ray diffraction; carrier density; energy gap; light emitting diodes; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; zinc compounds; Al doping; Hall effect; N doping; X-ray diffraction; ZnCdTe-ZnMgSeTe; ZnCdTe/ZnMgSeTe light emitting diode; ZnMgSeTe:Al; ZnMgSeTe:N; ZnTe:Al; carrier concentration; current injection; electrical properties; energy gap; molecular beam epitaxy; n-type ZnMgSeTe:Al layer; n-type ZnTe:Al layer; p-type ZnMgSeTe:N layer; structural properties; Aluminum; Crystalline materials; Hall effect; Lattices; Light emitting diodes; Molecular beam epitaxial growth; Temperature; X-ray diffraction; X-ray scattering; Zinc compounds;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Conference_Location :
Bundoora, Victoria, Australia
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022891
