DocumentCode :
2040822
Title :
TFT Technologies and Its Application to FED
Author :
Jang, Jin
Author_Institution :
Dept. of Inf. Display & Adv. Display Res. Center, Kyung Hee Univ., Seoul
fYear :
2006
fDate :
38899
Firstpage :
95
Lastpage :
95
Abstract :
The TFT technologies with amorphous silicon, polycrystalline silicon and organic semiconductor will be presented together with the current issues for display applications. Active-matrix technologies are being used for manufacturing of TFT-LCD and TFT-OLED because of their advantages in realizing high performance displays. The advantages and disadvantages of active-matrix technologies for FED were discussed and a prototype AMFED using a high temperature processed amorphous silicon TFT on glass was presented
Keywords :
elemental semiconductors; field emission displays; organic semiconductors; silicon; thin film transistors; Si; TFT technologies; TFT-LCD; TFT-OLED; active-matrix technologies; field emission device; high temperature processed amorphous silicon; Active matrix technology; Amorphous silicon; Displays; Glass; Organic semiconductors; Prototypes; Semiconductor device manufacture; Temperature; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
Type :
conf
DOI :
10.1109/IVNC.2006.335374
Filename :
4134476
Link To Document :
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