CMOS image sensor overlaid with a HARP photoconversion film

Author

Yamauchi, M. ; Hayashida, Y. ; Kosugi, M. ; Moroboshi, K. ; Watabe, T. ; Ishiguro, T. ; Yamano, Koji ; Ohtake, H. ; Tajima, T. ; Watanabe, T. ; Kokubun, H. ; Abe, M. ; Tanioka, K.

Author_Institution

NHK Sci. & Tech. Res. Labs., Tokyo, Japan

fYear

2000

fDate

2000

Firstpage

89

Lastpage

92

Abstract

With the aim of creating a highly sensitive solid-state image sensor we developed a new CMOS image sensor that was made by overlaying a HARP (high-gain avalanche rushing amorphous photoconductor) photoconversion film on to the CMOS readout circuit. Prototype sensors were fabricated that used a new MOS transistor to increase breakdown voltage in the readout circuit. We developed connecting processes that were used to connect the HARP film to the readout circuit. Stable operation of the sensor was observed when the target voltage of 60 V was applied.

Keywords

CMOS image sensors; MOSFET; digital readout; photoconducting devices; 60 V; CMOS image sensor; CMOS readout circuit; HARP photoconversion film; MOS transistor; breakdown voltage; connecting processes; high-gain avalanche rushing amorphous photoconductor; prototype sensors; sensitive solid-state image sensor; Amorphous materials; CMOS image sensors; CMOS process; Charge-coupled image sensors; Image sensors; MOSFETs; Pixel; Sensor phenomena and characterization; Solid state circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022897

Filename

1022897