DocumentCode :
2040923
Title :
The silicon-based racetrack microcavity resonator: modeling and numerical experiments
Author :
Sutathammawat, W. ; Somkuarnpanit, S. ; Sae-Tung, K.
Author_Institution :
Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
fYear :
2000
fDate :
2000
Firstpage :
93
Lastpage :
96
Abstract :
This paper proposes the simulations of a racetrack microcavity resonator on a silicon substrate. The FDTD simulation was used as a numerical tool to find the optimized dimensions of the structure for 1.55 μm wavelength. A simple modeling based on mode coupling theory was also proposed to find the spectral characteristics of the device. The device obtains the characteristics: FSR of 21.5 and of 155 from mode coupling theory, compared with the characteristics: FSR of 22 and of 135 from FDTD method. This means the proposed analytic model of mode coupling theory could be employed as a method to promptly characterize the device, as well as other structures.
Keywords :
cavity resonators; digital simulation; elemental semiconductors; finite difference time-domain analysis; microcavities; semiconductor device models; silicon; 1.55 micron; Si; Si substrate; analytic model; finite-difference time-domain simulation; free spectral range; mode coupling theory; modeling; optimized dimensions; racetrack microcavity resonator; spectral characteristics; Bandwidth; Directional couplers; Finite difference methods; Microcavities; Numerical models; Optical resonators; Q factor; Silicon; Tellurium; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
Type :
conf
DOI :
10.1109/COMMAD.2000.1022898
Filename :
1022898
Link To Document :
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