DocumentCode :
2041193
Title :
Field Emission Properties of Pt Nanopillar Arrays Formed by Focused Ion Beams Induced Deposition
Author :
Jin, A.Z. ; Wang, Q. ; Li, Y.L. ; Yang, H.F. ; Li, J.J. ; Luo, Q. ; Cui, Z. ; Gu, C.Z.
Author_Institution :
Inst. of Phys., Chinese Acad. of Sci., Beijing
fYear :
2006
fDate :
38899
Firstpage :
129
Lastpage :
130
Abstract :
In this work, the nanofabrication of Pt nanopillar arrays with various geometries as field emitters was studied and their field emission properties were measured. Pt nanopillar arrays were fabricated on Si (100) substrate by FIB assisted chemical vapor deposition (CVD) method in a FEI DB235 dual-beam system, which is based on the principle of focusing an ion beam on the surface of a substrate in an organometallic precursor gas of C9H16Pt. For obtaining the nanopillar arrays with various densities and aspect ratios, some deposition parameters such as beam energy, beam current, beam dwelling time, angle between beam and substrate, pixel overlap ratio and the flow rate of organometallic gas, and so on were changed. By optimizing the process conditions, the formation of Pt nanopillar arrays with different densities from 0 to 1 times 108/cm 2, heights from 100 nm to 3mum, and tip radius from 80 to 150 nm were controlled
Keywords :
chemical vapour deposition; electron field emission; focused ion beam technology; ion-surface impact; nanostructured materials; nanotechnology; platinum; 80 to 150 nm; CVD; Pt; Pt nanopillar arrays; Si; Si (100) substrate; beam current; beam dwelling time; beam energy; chemical vapor deposition; field emission properties; field emitters; focused ion beams induced deposition; Electrodes; Electron emission; Fabrication; Focusing; Geometry; Ion beams; Mechanical factors; Physics; Scanning electron microscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
Type :
conf
DOI :
10.1109/IVNC.2006.335391
Filename :
4134493
Link To Document :
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